Maskless photolithography for etching and deposition

ABSTRACT

The present invention relates to maskless photolithography using a patterned light generator for creating 2-D and 3-D patterns on objects using etching and deposition techniques. In an embodiment, the patterned light generator uses a micromirror array to direct pattern light on a target object. In an alternate embodiment, the patterned light generator uses a plasma display device to generate and direct patterned light onto a target object. Specifically, the invention provides a maskless photolithography system and method for photo stimulated etching of objects in a liquid solution, patterning glass, and photoselective metal deposition. For photo stimulated etching of objects in a liquid solution, the invention provides a system and method for immersing a substrate in an etchant solution, exposing the immersed substrate to patterned light, and etching the substrate according to the pattern of incident light. For patterning photoreactive glass, the invention provides a system and method for exposing photosensitive or photochromic glass, and washing the target glass with rinse and acid etchant solutions. For photoselective metal deposition, the invention provides a system and method for coating and rinsing a substrate prior to exposure exposing the substrate to a patterned light generator to activate areas corresponding to the incident light pattern, and plating the substrate in the area activated by the light after exposure. By providing a maskless pattern generator, the invention advantageously eliminates the problems associated with using masks for photo stimulated etching, patterning glass, and photoselective metal deposition.

CROSS-REFERENCE TO A RELATED APPLICATION

[0001] This application claims the benefit of U.S. ProvisionalApplication No. 60/301,218, filed Jun. 27, 2001, and incorporated hereinby reference.

TECHNICAL FIELD

[0002] The present invention relates to photolithography systems andmethods, specifically, to maskless photolithography devices and methodsfor creating 2-D and 3-D patterns on objects using etching anddeposition techniques.

BACKGROUND ART

[0003] Photolithography systems are known in the art that direct lightbeams onto a photosensitive surface covered by a mask, etching a desiredpattern on the substrate corresponding to the void areas of the mask.Maskless photolithography systems are also known in the art as describedin Singh-Gasson, Sangeet et al., Nature Biotechnology 17, 974-78, 1999.The system described in this article uses an off-axis light sourcecoupled with a digital micromirror array to fabricate DNA chipscontaining probes for genes or other solid phase combinatorial chemistryto be performed in high-density microarrays.

[0004] A number of patents also exist which relate to masklessphotolithography systems, including U.S. Pat. Nos. 5,870,176; 6,060,224;6,177,980; and 6,251,550; all of which are incorporated herein byreference. While maskless photolithography systems disclosed in the artare directed to DNA chip and semiconductor manufacture, these prior artsystems and methods notably lack reference to other applications lendingthemselves to maskless photolithography techniques.

[0005] Photo-assisted wet etching of various semiconductor materials hasbeen disclosed [Shockley et al., U.S. Pat. No. 3,096,262; T. Yoshida etal., Proc IEEE Mems., 56-61, 1992; B. Peters et al., 7^(th) Intl. Conf.On Solid State Sensors and Actuators (Transducers '93), 254-57, 1993; c.Youtsey et al., Appl. Phys. Lett. 71(15), 1997]. In these references,the patterns generated are defined by physical masks placed in the pathof light used for photo-activation. While use of wet etching techniquessimplifies manufacture of semiconductors by eliminated the requirementof clean rooms required by traditional semiconductor manufacturingtechniques, physical masks are still required in the process. Whileeffective, the use of physical masks in the wet etching process hasnumerous drawbacks, including the cost of fabricating masks, the timerequired to produce the sets of masks needed to fabricatesemiconductors, the diffraction effects resulting from light from alight source being diffracted from opaque portions of the mask,registration errors during mask alignment for multilevel patterns, colorcenters formed in the mask substrate, defects in the mask, the necessityfor periodic cleaning and the deterioration of the mask as a consequenceof continuous cleaning. Thus, the drawbacks of using masks are noteliminated in the prior art wet etching techniques.

[0006] Patterns and structures are known to be created in photosensitiveglass, such as with the use of a direct laser writing process (C.Gimkiewicz et al., Microsystems Technology 4, 40-45, 1997). It is alsoknown to use a hard physical blocking mask-to-mask ultraviolet (UV)exposure to glass (R. Salim et al., Microsystems Technology 4, 32-34,1997). However, the laser process requires an expensive laser system andassociated electronic controls and can produce objectionable wastematerial during the laser etching process. On the other hand, the UVsystem disclosed in Microsystems Technology eliminates the need for alaser, but still requires the use of masks. Thus, the disadvantages ofusing masks are not eliminated.

[0007] Further, it is also known to make printed metal patterns byetching away unwanted material from a substrate. However, this processcan create hazardous waste material that requires special handling fordisposal. In addition, the process is inefficient due to loss throughwaste and expensive reclamation efforts.

[0008] Photo-selective metal deposition was introduced by WesternElectric, Incorporated in a factory setting in the 1960's. In theWestern Electric technology, a photofilm having a pattern thereon wasplaced on a drum having a light source in its center. However, the filmhad to be changed to create different patterns, and thereby, this systemsuffers from the same drawbacks as other mask-type photolithographysystems.

[0009] Accordingly, there is a need in the art for a method and systemfor maskless photolithography to create 2-D and 3-D patterns on objectsusing etching and deposition techniques. Specifically, the method andsystem needs to provide a maskless photolithography system for wetetching, creation of designs in photosensitive glass, and metaldeposition processes. This system needs to combine ease of use,reconfigurability, and the ability to eliminate the need for the use ofphysical masks. In summary, the system needs to provide all theadvantages of a maskless photolithography system at a reasonable cost,and include capabilities tailored to specific applications.

SUMMARY OF THE INVENTION

[0010] In view of the foregoing deficiencies of the prior art, it is anobject of the present invention to provide a maskless photolithographysystem for creating 2-D and 3-D patterns on objects using etching anddeposition techniques.

[0011] It is another object of the present invention to provide amaskless photolithography system and method for photo-stimulated etchingof objects in a liquid solution.

[0012] It is still another object of the present invention to provide amaskless photolithography system and method for patterningphotosensitive and photochromic glass.

[0013] It is yet another object of the present invention to providemaskless photolithography system and method for photoselective metaldeposition.

[0014] To achieve these objects, a system and method are provided tocreate two dimensional and three dimensional structures using a masklessphotolithography system that is directly reconfigurable and does notrequire masks, templates or stencils to create each of the planes orlayers on a multi layer two-dimensional or three dimensional structure.In an embodiment, the invention uses a micromirror array comprising upto several million elements to modulate light onto an object that hasphotoreactive compounds applied to the exposed surface or hasphotoreactive qualities. The desired pattern is designed and storedusing conventional computer aided drawing techniques and is used tocontrol the positioning of the individual mirrors in the micromirrorarray to reflect the corresponding desired pattern. Light impinging onthe array is reflected to or directed away from the object to createlight and dark spots on the substrate according to the pattern. Thepositioning information provided to the micromirror array can bemodulated to cause the individual mirrors to change their angularposition during exposure to reduce the effects of pixelation andstiction. Alternatively, a plasma cell array may be used to generate anddirect patterned light on an object, thereby replacing the micromirrorarray and separate light source and associated optics.

[0015] In the disclosed embodiments, various chemical solutionapplication systems are provided and used in conjunction with lightexposure to create the desired objects. In addition, an alignmentfixture, movable in three dimensions, for mounting of the object isprovided. The alignment fixture allows the affixed substrate to be movedin three dimensions, providing alignment in two, coplanar dimensions anda third dimension perpendicular to the two coplanar dimensions. Byproviding alignment in the third dimensional direction, the inventionadvantageously provides the capability to produce three-dimensionalstructures on the object.

[0016] The advantages of the invention are numerous. One significantadvantage is the ability to use the invention as a reconfigurable, rapidprototyping tool for creating two dimensional and three dimensionalmicro and macroscopic objects. Another advantage of the invention isthat it provides the ability to reduce prototyping costs and enabledevices to be fabricated more quickly with less risk. Still anotheradvantage of the current invention is a reduction in cost forprototyping activities realized by the elimination of physical masks.Yet another advantage of the current invention is that patterngeneration can be performed optically without having to use an expensivevacuum system required by conventional mask-based photolithography. Aparticular advantage of the current invention is the ability to usephoto-electrochemical induced etching of objects in solution to permitrapid fabrication of patterned objects. Still another advantage of thecurrent invention is the ability to create three-dimensional devicesusing an alignment stage to selectively expose successive layers in asubstrate.

[0017] All patents, patent applications, provisional applications, andpublications referred to or cited herein, or from which a claim forbenefit of priority has been made, are incorporated herein by referencein their entirety to the extent they are not inconsistent with theexplicit teachings of this specification.

[0018] Other aspects and advantages of the invention will becomeapparent from the following detailed description taken in conjunctionwith the accompanying drawings, illustrating, by way of example, theprinciples of the invention.

BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In order that the manner in which the above recited and otheradvantages and objects of the invention are obtained, a more particulardescription of the invention briefly described above will be rendered byreference to specific embodiments thereof, which are illustrated in theappended drawings. Understanding that these drawings depict only typicalembodiments of the invention and are not therefore to be considered tobe limiting of its scope, the invention will be described and explainedwith additional specificity and detail through the use of theaccompanying drawings in which:

[0020]FIG. 1A illustrates a maskless photolithography system.

[0021]FIG. 1B illustrates a maskless photolithography system using aplasma display.

[0022]FIG. 2 is a flow chart illustrating a maskless photolithographymethod.

[0023]FIG. 3A illustrates a maskless photolithography system for photostimulated etching of objects in a liquid solution according to anembodiment of the present invention.

[0024]FIG. 3B illustrates a maskless photolithography system for photostimulated etching of objects in a liquid solution according to anembodiment of the present invention using a plasma display.

[0025]FIG. 4A illustrates a maskless photolithography system forpatterning photosensitive and photochromic glass according to anembodiment of the present invention.

[0026]FIG. 4B illustrates a maskless photolithography system forpatterning photosensitive and photochromic glass according to anembodiment of the present invention using a plasma display.

[0027]FIG. 5A illustrates a maskless photolithography system forphotoselective metal deposition according to an embodiment of thepresent invention.

[0028]FIG. 5B illustrates a maskless photolithography system forphotoselective metal deposition according to an embodiment of thepresent invention using a plasma display.

[0029] It should be understood that in certain situations for reasons ofcomputational efficiency or ease of maintenance, the ordering andrelationships of the blocks of the illustrated flow charts could berearranged or re-associated by one skilled in the art. While the presentinvention will be described with reference to the details of theembodiments of the invention shown in the drawings, these details arenot intended to limit the scope of the invention.

DETAILED DISCLOSURE OF THE INVENTION

[0030] Reference will now be made in detail to the embodimentsconsistent with the invention, examples of which are illustrated in theaccompanying drawings. First, briefly, the invention is a system andmethod to create two dimensional and three dimensional structures usinga maskless photolithography system that is directly reconfigurable anddoes not require masks, templates or stencils to create each of theplanes or layers on a multi layer two-dimensional or three-dimensionalstructure. Specifically, the invention provides a system and method forphoto-stimulated etching of objects in a liquid solution, patterningphotosensitive and photochromic glass, and photoselective metaldeposition.

[0031] The invention uses a patterned light generator to create apatterned light beam corresponding to a desired mask pattern.Specifically, the invention uses a micromirror array comprising up toseveral million elements to modulate light onto a substrate that hasphotoreactive or photoresist compounds applied to the exposed surface.The desired pattern is designed and stored using conventional computeraided drawing techniques and is used to control the positioning of theindividual mirrors in the micromirror array to reflect the correspondingdesired pattern. Light impinging on the array is reflected to ordirected away from the substrate to create light and dark spots on thesubstrate according to the desired pattern. In addition, an alignmentfixture for mounting of the substrate allows the substrate to be movedin three dimensions, providing alignment in two, coplanar dimensions andthe capability to produce three dimensional structures by aligning thesubstrate in a third dimension perpendicular to the two coplanardimensions.

[0032] I. Maskless Photolithography

[0033] Referring now to FIG. 1, a maskless lithography system includes alight source 10, a removable filter 11, a first lens system 12, amicromirror array 14, a computer system 16, a second lens system 18, asubstrate 20, mounted on a movable alignment fixture 22, and an opticalviewer 24. A layer of photoreactive chemicals 21 is disposed on asubstrate 20.

[0034] As shown, light source 10 provides a beam of collimated light, orlight beam 26, which can be selectively filtered by inserting orremoving filter 11 from light beam 26. Alternatively, filter 11 can beplaced in a patterned light beam 27 reflected from said micromirrorarray 14. Light beam 26 is projected upon first lens system 12 and thenonto micromirror array 14, wherein each mirror in the micromirror arraycorresponds to a pixel of the mask pattern. Micromirror array 14 iscontrolled by computer system 16 over signal line(s) 15 to reflect lightin the patterned light beam 27 according to a desired mask patternstored in memory. In addition, computer system 16 can shift the desiredmask pattern in two dimensions to align the pattern with the substrate20 mounted on movable alignment fixture 22. Precise pattern alignmentsare made electronically by shifting the mask pattern informationprovided to the micromirror array such that the image reflected on thesubstrate is translated to correct for misalignment. For example, if themask pattern needs to be shifted to the right one pixel width to beproperly aligned on the substrate, the computer compensates for themisalignment by shifting the mask pattern one pixel width to the right.

[0035] Micromirror array 14 is controlled to modulate the positioning ofthe mirror to prevent stiction and pixelation. The individual mirrors ofmicromirror array 14 are driven to vary their angular orientation withrespect to on-axis illumination during exposure of a substrate. Afterbeing reflected in a desired pattern from micromirror array 14,patterned light beam 27 passes through second lens system 18, andimpinges on a layer of photoreactive chemicals 21 applied to substrate20, thereby creating a pattern on substrate 20 by producing a reactionbetween the layer of photoreactive chemicals 21 and substrate 20.Alternatively, a photoresist chemical could be applied to substrate 20to etch areas of substrate 20 not masked off by the mask pattern duringan exposure.

[0036] The mask pattern described above is a programmable mask patterngenerated with the use of computer aided design and is resident oncomputer system 16. Accordingly, the mask pattern to be transferred tothe layer of photoreactive chemicals 21 and substrate 20 is aselectively programmable mask pattern. Thus, with a programmable maskpattern, any portion of the pattern on the substrate 20 can bemanipulated and/or changed as desired for rendering of desired changesas may be needed, furthermore, on a significantly reduced cycle time.

[0037] Micromirror array 14 described above is a micro mirror deviceknown in the art. With the micro mirror device, light is reflectedaccording to a pattern of pixels as controlled according to a prescribedpixel/bit mask pattern received from computer system 16. The lightreflecting from the micro mirror device thus contains the desired maskpattern information. A micro mirror device may include any suitablelight valve, for example, such as that used in projection televisionsystems and which are commercially available. Light valves are alsoreferred to as deformable mirror devices or digital mirror devices(DMD). One example of a DMD is illustrated in U.S. Pat. No. 5,079,544and patents referenced therein, in which the light valve consists of anarray of tiny movable mirror-like pixels for deflecting a beam of lighteither to a display screen (ON) or away from the display optics (OFF).The pixels of the light valve device are also capable of being switchedvery rapidly. Thus, with the use of the light valve, thephotolithography system of the present disclosure can implement changesin the mask pattern in a relatively quick manner. The light valve isused to modulate light in accordance with a mask pattern informationprovided by the computer system 16. In addition, the DMD reflects light,thus no appreciable loss in intensity occurs when the patterned light isprojected upon the desired subject during the lithographic maskexposure.

[0038] The positioning of the individual micromirrors in the micromirrorarray can be modulated slightly while positioned in a desired maskpattern. By slightly changing the position of the mirrors and durationof exposure of a substrate, the effects of pixelation on the exposedsubstrate and stiction of the mirrors can be reduced. The duty cycle ofthe modulation command can be selectively modified to achieve an optimumratio between on axis, direct exposure, and off axis, indirect exposure.As a result, the micromirrors are constantly moving to prevent stiction,and further allow integration of inter-pixel exposure areas to provideuniform coverage of the mask pattern to eliminate pixelation.

[0039] Advantageously, images are optionally shifted electronically toprovide fine alignment of the pattern on substrate 20. The mask patternis digitally shifted according to alignment information in one or moredirections for achieving a desired mask alignment on substrate 20.Adjustments in alignment are carried out electronically in the mask bitpattern information provided to the light valve. As a result, fineadjustments in pattern alignment can be easily accomplished.

[0040] Movable alignment fixture 22, in conjunction with optical viewer24, provides the capability to initially align substrate 20 underpatterned light beam 27 using mechanical alignment mechanisms (notshown) to align substrate 20 in three dimensions. The mechanicalalignment system may include gears, pulleys, belts, chains, rods,screws, hydraulics, pneumatics, piezo motion, or combinations thereof asknown in the art to support and move an object in three dimensions.While performing alignment procedures, filter 11 is inserted in lightbeam 26 to filter out the wavelengths of light that react with the layerof photoreactive chemicals 21 on substrate 20. Optical viewer 24,provides a means to monitor the positioning of substrate during manualalignment. While providing alignment in coplanar first and seconddimensions, alignment fixture 22 advantageously provides alignment in adirection perpendicular to the coplanar first and second dimensions,allowing fabrication of three dimensional objects. For example, to gainmore control over sidewall profiles or to produce complicatedstructures, multiple layers of substrate 20 can be sequentially exposedby aligning substrate 20 in the third dimension to create threedimensional features. Coupled with optional computer controlledalignment of the desired pattern, the invention provides the capabilityto quickly manually align substrate 20 under patterned light beam 27 andallows computer system 16 to automatically finely tune the alignmentbefore exposing layer of photoreactive chemicals 21 on substrate 20.

[0041] In an alternative embodiment shown in FIG. 1B, a plasma displaydevice 13 can be substitute for the micromirror array 14, light source10 and associated optics of FIG. 1A. Referring now to FIG. 1B, anembodiment of the current invention includes a plasma display device 13,a computer system 12, a lens system 16, a substrate 20, mounted on amovable alignment fixture 22, and an optical viewer 24. A layer ofphotoreactive chemicals 21 is disposed on the substrate 20.

[0042] As shown, plasma display device 13 generates a beam of light, orpatterned light beam 27, wherein each pixel of the plasma display 13corresponds to a pixel of the mask pattern. Plasma display device 13 iscontrolled by computer system 16 over signal line(s) 14 to generatelight according to a desired mask pattern stored in memory. In addition,computer system 12 can optionally shift the desired mask pattern in twodimensions to align the pattern with the substrate 20 mounted on movablealignment fixture 22. Precise pattern alignments are made electronicallyby shifting the mask pattern information provided to the plasma displaydevice 13 such that the image directed to the substrate is translated tocorrect for misalignment. For example, if the mask pattern needs to beshifted to the right one pixel width to be properly aligned on thesubstrate, the computer compensates for the misalignment by shifting themask pattern one pixel width to the right.

[0043] The patterned light beam radiated from plasma display device 13can be selectively filtered by inserting or removing filter 18 frompatterned light beam 27. Filtering can take place at any point along thelight beam path to prevent exposure during alignment. A lens system 16can collimate and condition the light beam as desired. After passingthrough lens system 16, patterned light beam 27 impinges on a layer ofphotoreactive chemicals 21 applied to substrate 20, thereby creating apattern on substrate 20 by producing a reaction between the layer ofphotoreactive chemicals 21 and substrate 20. Alternatively, aphotoresist chemical could be applied to substrate 20 to etch areas ofsubstrate 20 not masked off by the mask pattern during an exposure.

[0044] A method of using the maskless photolithography system currentinvention described above will now be explained. It should be understoodthat in certain situations for reasons of computational efficiency orease of maintenance, the ordering and relationships of the blocks of theillustrated flow charts could be rearranged or re-associated by oneskilled in the art. Starting from step 50, a desired mask pattern isdesigned and stored on computer system 16 in step 52. Alternatively,mask pattern designs can be designed on other computer systems andimported into computer system 16. Next, in step 54, a substrate 20 isplaced on alignment fixture 22 and coated with a layer of photoreactivechemicals 21 in step 56.

[0045] Once the substrate is mounted in alignment fixture 22, the filter11 is placed in the light beam 26 path according to step 58 to filterthe light and prevent exposure of the substrate. Next, the computersystem 16 can then be instructed to provide the resident mask patterninformation to micromirror array 14 as shown in step 60, and themicromirror array 14 responds by orienting each individual mirror toreflect or direct light beam 26 away from substrate 20 according to thedesired pattern. Next, alignment of the substrate is enabled by excitingthe light source 10 to provide a light beam in step 62, projecting lightbeam 26 through first lens system 12, and then onto micromirror array14. In turn, micromirror array 14 reflects light beam 26 through secondlens system 18 and onto layer of photoreactive chemicals 21 andsubstrate 20.

[0046] With the desired pattern projected on substrate 20, alignmentfixture 22 can be manually aligned in three dimensions according to step64 by moving alignment fixture 22 to ensure that substrate 20 isproperly located in patterned light beam 27. Proper alignment isverified by viewing the projected pattern on substrate 20 throughoptical viewer 24. Once substrate 20 is manually aligned, alignmentinformation can optionally be provided to computer system 16 andcomputer system 16 automatically adjusts the micromirror 14 by shiftingthe pattern in two dimensions to attain proper alignment in optionalstep 66. Having aligned substrate 20, the layer of photoreactivechemicals 21 on substrate 20 is exposed in step 70 by removing filter 11from light beam 26 in step 68 and allowing the light to cause a reactionbetween layer of photoreactive chemicals 21 and substrate 20 for arequired reaction time depending on the photoreactive chemicals used.For example, using standard Novolac™ positive photoresist, an exposuretime of 60 seconds is used. In an embodiment, during exposure step 70,the angular position of the mirrors in micromirror array 14 is variedslightly according to commands from computer system 16. For example,when masking a 25 micron square feature, the angular position of themirrors in micromirror array 14 might be varied so that the maskeffectively covers an area of 36 microns square, centered on the desired25 micron square feature. As a further example, the duty cycle for theangular deflection could be adjusted so that the 25 micron squarefeature is masked 90% of the total exposure time and the remaining 11square micron area is covered 10% of the total exposure time. Bymodulating the position of the mirrors as described, stiction of themirrors is reduced. Further, pixelation effects on the substrate arereduced by providing mask pattern coverage of the interpixel areas notcovered by direct, on axis illumination.

[0047] If further exposures are desired in step 72, such as requiredwhen creating three-dimensional objects, the above method is repeated byreturning to step 52 until the desired object is fabricated. A newdigital mask pattern is provided, another photoreactive coat is applied,and the substrate is realigned and re-exposed. Once the desired objecthas been created, the process ends in step 74.

[0048] An example of the current invention using the system and methoddescribed above will now be presented. A maskless photography system isespecially adapted to be an integrated, reconfigurable, rapidprototyping is described. The system provides optics, a light source,and integrated electronic components used to directly generate patternsfor the exposure of photoresist and other photoimagable materials. Abroad band spectrum, high intensity white light source provides theexposure energy for the process. This light is then filtered andoptimized for the exposure process, using a variety of integratedoptical components. A direct coupled optical delivery system ensuresefficient transfer of the light energy. Using proven optical techniques,the projected image is free of distortion and uniform through out theexposure area. With the optimized optical stream, the image is imposedin the light path, providing the final exposure pattern. This pattern isthen transferred to the substrate surface and used to expose thephoto-sensitive material required in the user's fabrication process.

[0049] A personal computer operably connected to a micromirror array toprovide mask patterns. The mask patterns are generated in the computerand then transferred to the micromirror array to provide the opticalpattern for exposure. The pattern is transferred to a substrate and isobserved using an optical microscope. This microscope is needed forpattern alignment to the substrate. Alignment is controlled through theuse of a course alignment stage provided by a mechanically movablesubstrate mounting alignment fixture, combined with a fine, electronicalignment stage. This fine alignment stage is computer controlled andaligns the mask pattern reflected from the micromirror instead of movingthe alignment fixture, thereby offering exceptional accuracy andrepeatability. Once alignment is complete, substrate exposure occurs.Through the use of a step and repeat method, the entire substratesurface can be exposed and multiple layers can be created using analignment stage movable in a direction parallel to the light beam.

[0050] In addition, according the invention, three-dimensional patternscan be created using the three dimension alignment capabilitiesdisclosed above. For example, patterning using thick photo resist ormultilayer patterning of individual photoresist layers. These techniquescan be use to provide either a photomask for subsequent etching ofsubstrate materials or if the photopolymer is compatible with thechemistry used in the device, the fabricated features can be used aspart of the device itself.

[0051] The system described above can be adapted for use in novelenvironments. Specifically, a system and method of masklessphotolithography can be used to create 2-D and 3-D patterns on objectsusing etching and deposition techniques. In particular, systems andmethods for photo stimulated etching of objects in a liquid solution,patterning photosensitive and photochromic glass, and photoselectivemetal deposition will be described below.

[0052] II. Maskless Photolithography Photo Stimulated Etching of Objectsin a Liquid Solution.

[0053] Referring now to FIG. 3A, an embodiment of the current inventionfor photo stimulated etching of objects in a liquid solution isdepicted. In the embodiment, a maskless photolithography system iscombined with an electrochemical cell to etch objects by exposing theobjects to radiation while submerged in an electrochemical bath.Patterns generated on the submerged objects are defined by the patternedlight radiated by the maskless photolithography system.

[0054] As shown in FIG. 3A, a maskless lithography system for etching ofobjects in a liquid solution includes a light source 10, a removablefilter 11, a first lens system 12, a micromirror array 14, a computersystem 16, a second lens system 18, and a substrate 20, affixed to amount 80, submerged in an electrochemical cell 82 of photoreactiveetchant solution 84. In an embodiment, a current meter 86 is provided tomonitor the process by attaching a positive lead 88 to thesemiconductor-type substrate 20, and submerging a negative lead 90, suchas a platinum electrode, in the etchant solution 84, wherein thesubstrate 20 acts as an anode and the negative lead acts as a cathode.In alternative embodiments, a movable alignment fixture 22 upon whichthe electrochemical cell 82 is mounted, and an optical viewer 24 areprovided as depicted in FIG. 1.

[0055] As shown in FIG. 3A, light source 10 provides a beam ofcollimated light, or light beam 26, which can be selectively filtered byinserting or removing filter 11 from light beam 26. Light beam 26 isprojected upon first lens system 12 and then onto micromirror array 14,wherein each mirror in the micromirror array corresponds to a pixel ofthe mask pattern. Micromirror array 14 is controlled by computer system16 over signal line(s) 15 to reflect light according to a desired maskpattern stored in memory. In addition, computer system 16 can shift thedesired mask pattern in two dimensions to align the pattern with thesubstrate 20.

[0056] As previously described in the alternative embodiment shown inFIG. 1B, a plasma display device 13 can be substituted for themicromirror array, light source and associated optics. Thus, the lightsource and patterning system can be combined in an integrated plasmadisplay device 13.

[0057] After being reflected in a desired pattern from micromirror array14, patterned light beam 27 passes through second lens system 18, andimpinges the substrate 20, thereby creating a pattern on the substrate20 submerged in the etchant solution 24. By illuminating thesemiconductor-type substrate 20, the patterned light beam 27 generateselectron hole pairs in the substrate 20 which enhances the reduction andoxidation reactions within the electrochemical cell 22. As a result, thesemiconductor-type substrate 20 is anisotropically etched in the regionswhere the patterned light beam 27 illuminates the surface of thesubstrate 20, whereby the radiated pattern is recreated on thesubstrate. Using this technique, semiconductor devices can be created ina variety of semiconductor materials, such as p-type silicon, n-typesilicon, and n-type Gallium Nitride (GaN) materials.

[0058] III. Maskless Photolithography Patterning of Photosensitive andPhotochromic Glass.

[0059] Referring now to FIG. 4A, an embodiment of the current inventionfor patterning of photosensitive and photochromic glass is depicted. Inthe embodiment, a maskless photolithography system is combined withirradiation of photoreactive glass to create patterning of designs,colors, and structures in photoreactive glass. The projection of lightupon photoreactive glass causes changes in the glass transmissioncharacteristics. Permanent shading and etched structures are created inphotosensitive glass that reacts with light by changing composition. Byexposing photosensitive glass to light radiation, a change in thecomposition of the glass is induced and renders the exposed areas of theglass susceptible to anisotropic etching by acid in the exposed regions.Ornamental designs, lens arrays, art glass, glass channels,architectural glass, and high aspect microstructures may be created inthis manner. In an alternative embodiment, temporary image projectionand displays are created in photochromic glass that changes transmissiveproperties in the presence of light.

[0060] As shown in FIG. 4A, a maskless lithography system for patterningof photosensitive and photochromic glass includes a light source 10, aremovable filter 11, a first lens system 12, a micromirror array 14, acomputer system 16, a second lens system 18, and a glass substrate 100.In alternative embodiments, an optical viewer 24, as depicted in FIG. 1,and a circular alignment fixture 102, rotatably mounted on an axis 104for mounting target glass substrates 100 is provided. In a furtherembodiment, a water reservoir 106 and an acid reservoir 108, fluidicallyconnected to and providing rinse water and acid etchant through nozzles107 and 109, respectively, are positioned to sequentially apply etchingacid and water rinse to target glass substrates 100 passing under thepatterned light beam 27.

[0061] As shown in FIG. 4A, light source 10 provides a light beam 26,which can be selectively filtered by inserting or removing filter 11from light beam 26. Light beam 26 is projected upon first lens system 12and then onto micromirror array 14, wherein each mirror in themicromirror array corresponds to a pixel of the mask pattern.Micromirror array 14 is controlled by computer system 16 over signalline(s) 15 to reflect light according to a desired mask pattern storedin memory. In addition, computer system 16 can shift the desired maskpattern in two dimensions to align the pattern with the glass substrate100. After being reflected in a desired pattern from micromirror array14, patterned light beam 27 passes through second lens system 18, andimpinges the substrates 100 sequentially as the glass substrates 100 arerotated beneath the patterned light beam 27. Following irradiation, eachglass substrates 100 is subjected to a water rinse and acid rinse, eachof these treatments applied through nozzles 106 and 107, respectively,positioned above the path of each glass substrates 100.

[0062] As previously described, a plasma display device 13 can besubstituted for the micromirror array 14, light source 10 and associatedoptics as shown in FIG. 4B. Thus, the light source and patterning systemcan be combined in an integrated plasma display device 13.

[0063] IV. Maskless Photolithography for Photoselective MetalDeposition.

[0064] Referring now to FIG. 5A, an embodiment of the current inventionfor photoselective metal deposition is depicted. In the embodiment, amaskless photolithography system is combined with a chemical bath todeposit metal in patterns on objects by exposing the objects toradiation while submerged in or after removal from the chemical bath.Patterns generated on the submerged objects are defined by the patternedlight radiated by the maskless photolithography system. While thetraditional method for making printed metal patterns uses a subtractivetechnique, including etching away unwanted material, in the presentembodiment, material is added according to a desired pattern. Selectivemetal deposition from solution is activated by light irradiation onto asubmerged or non-submerged substrate. The chemical solution is lightsensitive and light activated so that where light impinges on asubmerged or non-submerged substrate in a pre-selected pattern,activation for plating of the metal is provided.

[0065] As shown in FIG. 5A, a maskless lithography system forphotoselective metal deposition includes a light source 10, a removablefilter 11, a first lens system 12, a micromirror array 14, a computersystem 16, a second lens system 18, and a metal substrate 120. Inalternative embodiments, a movable alignment fixture 22, and an opticalviewer 24 are provided as depicted in FIG. 1A.

[0066] As depicted in FIG. 5A, light source 10 provides a light beam 26,which can be selectively filtered by inserting or removing filter 11from light beam 26. Light beam 26 is projected upon first lens system 12and then onto micromirror array 14, wherein each mirror in themicromirror array corresponds to a pixel of the mask pattern.Micromirror array 14 is controlled by computer system 16 over signalline(s) 15 to reflect light according to a desired mask pattern storedin memory. In addition, computer system 16 can shift the desired maskpattern in two dimensions to align the pattern with the metal substrate120. After being reflected in a desired pattern from micromirror array14, patterned light beam 27 passes through second lens system 18, andimpinges the metal substrate 120.

[0067] In the present embodiment, the substrate 120 is first coated witha light responsive catalytic/electrochemically reactive layer, such tinoxide, in a coating tank 122. Following a rinse in a rinse tank 124, themetal substrate 120 is positioned in the exposure station 126, where thesubstrate 120 is exposed to the patterned light beam 27, radiating, forexample, light in the UV range. The exposed regions are then madereceptive to the introduction of additional surface coatings, such aspalladium chloride solution, in a second coating tank 128. Next, thecoated substrate 120 having a pattern created in the exposure station126, is subjected to third chemical bath to accept additional metals,such as copper. In an embodiment, the third chemical bath is anelectro-less bath 130, or alternatively, an electrolytic plating bath132. The resulting substrate 120, has a metal pattern defined by theprojected patterned light beam 27.

[0068] As previously described, a plasma display device 13 can besubstituted for the micromirror array 14, light source 10 and associatedoptics as shown in FIG. 5B. Thus, the light source and patterning systemcan be combined in an integrated plasma display device 13.

[0069] It should be appreciated that one skilled in the art that theprocess may be configured in any number of modes as known in the art,such as bath mode or continuous belt mode. Further the substrate maycomprise a rigid or flexible material, subjected to a variety of metalsdepending on the plating solution(s)

[0070] Furthermore, many other variations are possible using the presentinventive system and method. For example, the invention can be used forrapidly creating micro electro-mechanical (MEMs) devices, creatingartificial receptors chips, creating integrated circuit patterns ofconducting polymers, creating integrated microsensor arrays and fluiddelivery networks, chemical vapor deposition, thin film fabrication,gray scale photolithography, and large area pattern expression.

[0071] Based on the foregoing specification, the computer system of thedisclosed invention may be implemented using computer programming orengineering techniques including computer software, firmware, hardwareor any combination or subset thereof. Any such resulting program, havingcomputer-readable code means, may be embodied or provided within one ormore computer-readable media, thereby making a computer program product,i.e., an article of manufacture, according to the invention. Thecomputer readable media may be, for instance, a fixed (hard) drive,diskette, optical disk, magnetic tape, semiconductor memory such asread-only memory (ROM), etc., or any transmitting/receiving medium suchas the Internet or other communication network or link. The article ofmanufacture containing the computer code may be made and/or used byexecuting the code directly from one medium, by copying the code fromone medium to another medium, or by transmitting the code over anetwork.

[0072] One skilled in the art of computer science will easily be able tocombine the software created as described with appropriate generalpurpose or special purpose computer hardware to create a computer systemor computer sub-system embodying the method of the invention. Anapparatus for making, using or selling the invention may be one or moreprocessing systems including, but not limited to, a central processingunit (CPU), memory, storage devices, communication links and devices,servers, I/O devices, or any sub-components of one or more processingsystems, including software, firmware, hardware or any combination orsubset thereof, which embody the invention. User input may be receivedfrom the keyboard, mouse, pen, voice, touch screen, or any other meansby which a human can input data into a computer, including through otherprograms such as application programs.

[0073] It should be understood that the examples and embodimentsdescribed herein are for illustrative purposes only and that variousmodifications or changes in light thereof will be suggested to personsskilled in the art and are to be included within the spirit and purviewof the claims.

What is claimed is:
 1. A maskless photolithography system for photostimulated etching of substrates in a liquid solution comprising: a. acomputer system for generating mask patterns and alignment instructions;b. a maskless patterned light generator, radiating a patterned lightbeam, operably connected to and controllable by said computer system;and c. an electrochemical bath for immersing the substrate, comprisingan outer container, a etchant solution reactive with the substrate, aninner mount for affixing the substrate so that the substrate is fixedlyimmersed in said etchant solution and exposable to said patterned lightbeam, an anode electrically attached to the substrate, and a cathodeimmersed in said etchant solution and positioned so as not to makeelectrical contact with the substrate, wherein said anode and cathodeare electrically connected to an ammeter; wherein the immersed substrateis exposed to said patterned light beam, and said patterned light beamimpinging on the immersed substrate causes said etchant solution toreact with the immersed photoactive substrate, resulting in anisotropicetching of the immersed substrate according to said mask pattern of saidpatterned light beam.
 2. The system of claim 1, wherein said masklesspatterned light generator comprises: a. an array of positionablemicromirrors, wherein said micromirrors reflect light according to saidmask patterns provided by said computer system; b. an optical system forgenerating, collimating, and directing the light beam to saidmicromirror array; and c. an optical system for further collimating thelight beam reflected from said mirrors and directing said patternedlight beam onto the immersed substrate and to create patterns on theimmersed substrate corresponding to said mask patterns.
 3. The system ofclaim 2, further comprising a computer controlled pattern modulationsystem, for varying the angular position of said micromirrors andduration of exposure of the immersed substrate, said modulation systemaltering the positioning of said micromirrors in response toinstructions provided by said computer, whereby pixelation and stictionare reduced.
 4. The system of claim 1, wherein said maskless patternedlight generator comprises a plasma display having individuallyaddressable pixels, operably connected to and controllable by saidcomputer system, wherein said display generates said patterned lightbeam corresponding to said mask patterns provided by said computersystem to expose the immersed substrate to said patterned light beam andto create patterns on the immersed substrate corresponding to said maskpatterns.
 5. The system of claim 1, further comprising a manuallycontrolled alignment fixture for detachably mounting the outer containerof said electrochemical bath, wherein said alignment fixture is movablein coplanar first and second dimensions, and in a third dimensiondirection substantially perpendicular to said first and second coplanardimensions and substantially parallel to said patterned light beam; saidfixture providing three dimensional alignment of the immersed substratebeneath said patterned light beam, wherein said alignment fixture ismoved in three dimensions in response to mechanical alignments directlyprovided by a user.
 6. The system of claim 1, further comprising acomputer controlled pattern alignment system, for providing electricalalignment of said patterns in coplanar first and second dimensions,wherein said pattern alignment system adjusts the alignment of said maskpatterns in coplanar first and second dimensions in response toinstructions provided by said computer according to said alignmentinformation, so that said pattern is shifted in at least one coplanardirection.
 7. The system of claim 1, further comprising an opticalviewer to allow optical monitoring of positioning of the immersedsubstrate mounted in said alignment fixture by visually verifying thatan image projected on the immersed substrate is properly aligned.
 8. Thesystem of claim 1, further comprising an optical filter, removablymounted in the light beam to selectively filter light impinging on theimmersed substrate to prevent exposure of the immersed substrate duringan alignment procedure.
 9. The system of claim 1, wherein substratecomprises an n-type silicon (Si) substrate, p-type Si substrate, andgallium nitride (GaN) substrate.
 10. A maskless photolithography systemfor patterning of photoreactive glass comprising: a. a computer systemfor generating mask patterns and alignment instructions; b. a masklesspatterned light generator, radiating a patterned light beam, operablyconnected to and controllable by said computer system, and c. aphotoreactive glass substrate; wherein said photoreactive glasssubstrate receives radiation from said patterned light beam, whereinsaid patterned light beam impinging on said photoreactive glasssubstrate creates patterns on said photoreactive glass substratecorresponding to said mask pattern of said patterned light beam.
 11. Thesystem of claim 10, further comprising an acid etchant, reactive withsaid photoreactive glass substrate, and applied as a coating to anexposed surface of said photoreactive glass substrate, wherein saidphotoreactive glass substrate, coated with said acid etchant, receivesradiation from said patterned light beam, wherein said patterned lightbeam impinging on said photoreactive glass substrate causes anisotropicetching of said photoreactive glass substrate by said acid etchant inareas corresponding to incident said patterned light beam.
 12. Thesystem of claim 10, further comprising a circular alignment fixture,rotatably mounted on an axis for detachably affixing a plurality of saidphotoreactive glass substrates around the perimeter of said circularalignment fixture, wherein said fixture provides sequential exposure ofa plurality of affixed said photoreactive glass substrates by rotatingsaid fixture so that each of said photoreactive glass substrates isexposed to said patterned light beam.
 13. The system of claim 10,further comprising an acid reservoir and a water reservoir, fluidicallyconnected to and providing said acid etchant and rinse water through anacid nozzle and a water nozzle, respectively, positioned to sequentiallyapply etching acid and water rinse on said photoreactive glasssubstrates exposed to said patterned light beam.
 14. The system of claim10, wherein said maskless patterned light generator comprises: a. anarray of positionable micromirrors, wherein said micromirrors reflectlight according to said mask patterns provided by said computer system;b. an optical system for generating, collimating, and directing thelight beam to said micromirror array; c. an optical system for furthercollimating the light beam reflected from said mirrors and directingsaid patterned light beam onto said photoreactive glass substrate and tocreate patterns on said photoreactive glass substrate corresponding tosaid mask patterns.
 15. The system of claim 14, further comprising acomputer controlled pattern modulation system for varying the angularposition of said micromirrors and duration of exposure of saidphotoreactive glass substrate, said modulation system altering thepositioning of said micromirrors in response to instructions provided bysaid computer, whereby pixelation and stiction are reduced.
 16. Thesystem of claim 10, wherein said maskless patterned light generatorcomprises a plasma display having individually addressable pixels,operably connected to and controllable by said computer system, whereinsaid display generates said patterned light beam corresponding to saidmask patterns provided by said computer system to expose saidphotoreactive glass substrate to said patterned light beam and to createpatterns on said photoreactive glass substrate corresponding to saidmask patterns.
 17. The system of claim 10, further comprising a manuallycontrolled alignment fixture for detachably mounting said photoreactiveglass substrate, wherein said alignment fixture is movable in coplanarfirst and second dimensions, and in a third dimension directionsubstantially perpendicular to said first and second coplanar dimensionsand substantially parallel to said patterned light beam; said fixtureproviding three dimensional alignment of said photoreactive glasssubstrate beneath the light beam, wherein said alignment fixture ismoved in three dimensions in response to mechanical alignments directlyprovided by a user.
 18. The system of claim 10, further comprising acomputer controlled pattern alignment system, for providing electricalalignment of said patterns in coplanar first and second dimensions,wherein said pattern alignment system adjusts the alignment of said maskpatterns in coplanar first and second dimensions in response toinstructions provided by said computer according to said alignmentinformation, so that said pattern is shifted in at least one coplanardirection.
 19. The system of claim 10, further comprising an opticalviewer to allow optical monitoring of positioning of said photoreactiveglass substrate mounted in said alignment fixture by visually verifyingthat an image projected on said photoreactive glass substrate isproperly aligned.
 20. The system of claim 10, further comprising anoptical filter, removably mounted in the light beam to selectivelyfilter light impinging on said photoreactive glass substrate to preventexposure of said photoreactive glass substrate during an alignmentprocedure.
 21. The system of claim 10, wherein said photoreactive glassis photochromic glass or a photosensitive glass.
 22. The system of claim10, wherein said system is used to create a temporary display inphotoreactive glass.
 23. A maskless photolithography system forphotoselective metal deposition on a substrate comprising: a. a computersystem for generating mask patterns and alignment instructions; b. amaskless patterned light generator, radiating a patterned light beam,operably connected to and controllable by said computer system; c. alight activated catalytic coating bath to coat said substrate; and d. adeposition bath for depositing metal on said substrate corresponding toregions activated by said patterned light beam; wherein said substrate,coated with said light activated catalyst, receives radiation from saidpatterned light beam, wherein said patterned light beam impinging onsaid substrate creates activated regions on said substrate correspondingto said patterned light beam, wherein metal in solution is deposited onsaid activated regions of said substrate.
 24. The system of claim 23,wherein said light activated catalytic coating bath comprises a solutionof tin oxide.
 25. The system of claim 23, further comprising a rinsebath to rinse said substrate after said substrate is coated with saidlight activated catalytic coating and before said substrate is exposedto said patterned light beam.
 26. The system of claim 23, furthercomprising a surface coating bath to apply a coating to said substrateafter said substrate receives said patterned light and before said metalis deposited on said substrate.
 27. The system of claim 26, wherein saidsurface coating bath comprises palladium chloride.
 28. The system ofclaim 23, wherein said deposition bath comprises an electro-less metalplating solution.
 29. The system of claim 23, wherein said depositionbath comprises an electrolytic metal plating solution, an anode,electrically attached to said substrate, and a cathode, immersed in saidmetal plating solution and positioned so as not to make electricalcontact with said substrate, wherein said anode is connected to thepositive terminal of a voltage source, and said cathode is connected toa negative terminal of said voltage source, wherein said substrate iselectrically biased to receive said metal plating.
 30. The system ofclaim 23, wherein said maskless patterned light generator comprises: a.an array of positionable micromirrors, wherein said micromirrors reflectlight according to said mask patterns provided by said computer system;b. an optical system for generating, collimating, and directing thelight beam to said micromirror array; and c. an optical system forfurther collimating the light beam reflected from said mirrors anddirecting said patterned light beam onto said substrate and to createpatterns on said substrate corresponding to said mask patterns.
 31. Thesystem of claim 30, further comprising a computer controlled patternmodulation system, for varying the angular position of said micromirrorsand duration of exposure of said substrate, said modulation systemalters the positioning of said micromirrors in response to instructionsprovided by said computer, whereby pixelation and stiction are reduced.32. The system of claim 23, wherein said maskless patterned lightgenerator comprises a plasma display, having individually addressablepixels, operably connected to and controllable by said computer system,wherein said display generates said patterned light beam correspondingto said mask patterns provided by said computer system to expose saidsubstrate to said patterned light beam and to create patterns on saidsubstrate corresponding to said mask patterns.
 33. The system of claim23, further comprising a manually controlled alignment fixture fordetachably mounting said substrate, wherein said alignment fixture ismovable in coplanar first and second dimensions, and in a thirddimension direction substantially perpendicular to said first and secondcoplanar dimensions and substantially parallel to said patterned lightbeam; said fixture providing three dimensional alignment of a substratebeneath the light beam, wherein said alignment fixture is moved in threedimensions in response to mechanical alignments directly provided by auser.
 34. The system of claim 23, further comprising a computercontrolled pattern alignment system, for providing electrical alignmentof said patterns in coplanar first and second dimensions, wherein saidpattern alignment system adjusts the alignment of said mask patterns incoplanar first and second dimensions in response to instructionsprovided by said computer according to said alignment information, sothat said pattern is shifted in at least one coplanar direction.
 35. Thesystem of claim 23, further comprising an optical viewer to allowoptical monitoring of positioning of the substrate mounted in saidalignment fixture by visually verifying that an image projected on thesubstrate is properly aligned.
 36. The system of claim 23, furthercomprising an optical filter, removably mounted in the light beam toselectively filter light impinging on the substrate to prevent exposureof the substrate during an alignment procedure.
 37. A method formaskless photolithography for photo stimulated etching of a substrate ina liquid solution comprising: a. receiving mask pattern informationcorresponding to a desired pattern to be created on the substrate; b.generating mask patterns based on received mask pattern information; c.providing said mask patterns to patterned light generator; d. generatinga patterned light beam; e. affixing the substrate to a mount, immersingthe substrate affixed to said mount in an electrochemical bathcomprising an outer container and a etchant solution reactive with thephotoactive substrate, electrically attaching an anode to the substrate,immersing a cathode in said etchant solution and positioning saidcathode so as not to make electrical contact with the substrate,operably connecting said anode and cathode to an ammeter; f. directingsaid patterned light beam onto the immersed substrate; and g. exposingthe immersed photoactive substrate to said patterned light beam; whereinthe immersed substrate receives radiation from said patterned lightbeam, and said patterned light impinging on the immersed substrateenhances reactions within said bath, resulting in anisotropic etching ofthe immersed substrate corresponding to said mask pattern of saidpatterned light beam.
 38. The method of claim 37, wherein generatingsaid patterned light beam further comprises: a. receiving mask patternsat an array of positionable micromirrors operably connected to andcontrollable by a computer system; b. generating, collimating, anddirecting a light beam to said micromirror array; c. positioning saidmicromirrors to reflect the light beam from said micromirror arrayaccording to said mask patterns provided by said computer system; and d.collimating said patterned light beam reflected from said micromirrorarray.
 39. The method of claim 38, further comprising varying theangular position of said micromirrors and duration of exposure of saidsubstrate, whereby pixelation and stiction are reduced.
 40. The methodof claim 37, wherein generating said patterned light beam furthercomprises: a. receiving mask patterns at a plasma display, havingindividually addressable pixels, operably connected to and controllableby said computer system, b. activating the pixels of said plasma displayto generate a patterned light beam corresponding to said mask patternsprovided by said computer system; and c. collimating said patternedlight beam generated by said plasma display;
 41. The method of claim 37,further comprising: a. providing selective filtering of said patternedlight beam impinging on the immersed substrate to prevent exposure ofthe immersed substrate during an alignment procedure; b. allowing manualalignment of the immersed substrate under said patterned light beam bymoving said outer container holding the substrate immersed in saidetchant solution in three dimensions, wherein the immersed substrate ismoved in coplanar first and second dimensions, and moved in a thirddimension direction substantially perpendicular to said first and secondcoplanar dimensions, and substantially parallel to the light beamreflected from said micromirror array; c. allowing optical monitoring ofpositioning of the immersed substrate under the light beam to visuallyverify that an image projected on the immersed substrate is properlyaligned; d. receiving alignment information corresponding to alignmentof a desired mask pattern projected onto the immersed substrate; e.generating alignment instructions based on received said alignmentinformation; f. providing alignment instructions, based on saidalignment information, to said micromirror array to further align saidmask patterns in the coplanar first and second dimensions; g. adjustingsaid micromirror array according to said alignment instructions byshifting the mask pattern in at least one of the coplanar first andsecond dimensions; h. disabling filtering of said patterned light beam;i. exposing the immersed substrate; and j. repeating steps (a-i) tocreate a desired pattern on the immersed substrate.
 42. A method formaskless photolithography for patterning of photoreactive glasscomprising: a. receiving mask pattern information corresponding to adesired pattern to be created on said photoreactive glass substrate; b.generating mask patterns based on received mask pattern information; c.providing said mask patterns to a patterned light generator; d.generating a patterned light beam; e. directing said patterned lightbeam onto said photoreactive glass substrate; and f. exposing saidphotoreactive glass substrate to said patterned light beam; wherein saidphotoreactive glass substrate receives radiation from said patternedlight beam, wherein said patterned light beam impinging on saidphotoreactive glass substrate creates patterns on said photoreactiveglass substrate according to said mask pattern of said patterned lightbeam.
 43. The method of claim 42, further comprising applying an acidetchant coating, reactive with said photoreactive glass substrate, to anexposed surface of said photoreactive glass substrate, wherein saidphotoreactive glass substrate, coated with said acid etchant, receivesradiation from said patterned light beam, wherein said patterned lightbeam light impinging on said photoreactive glass substrate causesanisotropic etching of said photoreactive glass substrate by said acidetchant in areas corresponding to incident said patterned light beam.44. The method of claim 42, further comprising detachably affixing aplurality of said photoreactive glass substrates around the perimeter ofa circular alignment fixture, rotatably mounted on an axis, andsequentially exposing each of affixed said photoreactive glasssubstrates by rotating said fixture so that each of said photoreactiveglass substrates is exposed to said patterned light beam.
 45. The methodof claim 44, further comprising providing an acid reservoir and a waterreservoir, fluidically connected to an acid nozzle and a water nozzle,respectively, positioning said acid nozzle and said water nozzle aboveeach of said photoreactive glass substrates, and sequentially applyingetching acid and water rinse on each of said photoreactive glasssubstrates exposed to said patterned light beam.
 46. The method of claim42, wherein generating a patterned light beam further comprises: a.receiving mask patterns at an array of positionable micromirrors,operably connected to and controllable by a computer system; b.generating, collimating, and directing a light beam to said micromirrorarray; c. positioning said micromirrors to reflect the light beam fromsaid micromirror array according to said mask patterns provided by saidcomputer system; and d. collimating said patterned light beam reflectedfrom said micromirror array; wherein the generated light is reflectedfrom said micromirrors in said patterned light beam corresponding tosaid mask patterns provided by said computer system to expose saidphotoreactive glass substrate and to create patterns on saidphotoreactive glass substrate corresponding to said mask patterns. 47.The method of claim 46, further comprising varying the angular positionof said micromirrors and duration of exposure of a substrate, wherebypixelation and stiction are reduced.
 48. The method of claim 42, whereingenerating a patterned light beam further comprises: a. receiving maskpatterns at a plasma display, having individually addressable pixels,operably connected to and controllable by said computer system, b.activating the pixels of said plasma display to generate a patternedlight beam corresponding to said mask patterns provided by said computersystem; and c. collimating said patterned light beam generated by saidplasma display; wherein said display generates said patterned light beamcorresponding to said mask patterns provided by said computer system toexpose said photoreactive glass substrate to said patterned light beamand to create patterns on said photoreactive glass substratecorresponding to said mask patterns.
 49. The method of claim 42, furthercomprising: a. providing selective filtering of the light beam impingingon said photoreactive glass substrate to prevent exposure of saidphotoreactive glass substrate during an alignment procedure; b. allowingmanual alignment of said photoreactive glass substrate under the lightbeam by moving said photoreactive glass substrate in three dimensions,wherein said photoreactive glass substrate is moved in coplanar firstand second dimensions, and moved in a third dimension directionsubstantially perpendicular to said first and second coplanardimensions, and substantially parallel to the light beam reflected fromsaid micromirror array; c. allowing optical monitoring of positioning ofsaid photoreactive glass substrate under the light beam to visuallyverify that an image projected on the substrate is properly aligned; d.receiving alignment information corresponding to alignment of a desiredmask pattern projected onto said photoreactive glass substrate; e.generating alignment instructions based on received alignmentinformation; f. providing alignment instructions, based on saidalignment information, to said micromirror array to further align saidmask patterns in the coplanar first and second dimensions; g. adjustingsaid micromirror array according to said alignment instructions byshifting the mask pattern in at least one of the coplanar first andsecond dimensions; h. disabling filtering of the light beam; i. exposingsaid photoreactive glass substrate; and j. repeating steps (a-i) tocreate a desired pattern on said photoreactive glass substrate.
 50. Amethod for maskless photolithography for photoselective metal depositionon a substrate comprising: a. receiving mask pattern informationcorresponding to a desired pattern to be created on a said substrate; b.generating mask patterns based on received mask pattern information; c.providing said mask patterns to patterned light generator; d. generatinga patterned light beam; e. coating said substrate with a light activatedcatalytic coating; f. directing said patterned light beam onto saidsubstrate; and g. exposing said substrate to said patterned light beam;d. immersing exposed said substrate in a deposition bath for depositingmetal on said substrate corresponding to regions activated by saidpattered light beam; wherein said substrate, coated with said lightactivated catalyst receives radiation from said patterned light beam,wherein the light impinging on said substrate creates activated regionson said substrate corresponding to said patterned light beam, whereinmetal in solution is deposited on said substrate corresponding to saidactivated regions.
 51. The method of claim 50, further comprisingrinsing said substrate after said substrate is coated with said lightactivated catalytic coating and before said substrate is exposed to saidpatterned light beam.
 52. The method of claim 50, further comprisingapplying a coating to said substrate after said substrate receives saidpatterned light and before said metal is deposited on said substrate.53. The method of claim 50, wherein immersing said substrate in adeposition bath further comprises electrically attaching an anode tosaid substrate, immersing a cathode in said metal plating solution andpositioning said cathode so as not to make electrical contact with saidsubstrate, connecting said anode to a positive terminal of a voltagesource, and connecting said cathode to a negative terminal of saidvoltage source, wherein said substrate is electrically biased to receivesaid metal plating.
 54. The method of claim 50, wherein generating saidpatterned light beam further comprises: a. receiving mask patterns at anarray of positionable micromirrors, operably connected to andcontrollable by a computer system; b. generating, collimating, anddirecting a light beam to said micromirror array; c. positioning saidmicromirrors to reflect the light beam from said micromirror arrayaccording to said mask patterns provided by said computer system; and d.collimating said patterned light beam reflected from said micromirrorarray; wherein the generated light is reflected from said micromirrorsin said patterned light beam corresponding to said mask patternsprovided by said computer system to expose a substrate and to createpatterns on said substrate corresponding to said mask patterns.
 55. Themethod of claim 54, further comprising varying the angular position ofsaid micromirrors and duration of exposure of said substrate, wherebypixelation and stiction are reduced.
 56. The method of claim 50, whereingenerating a patterned light beam further comprises: a. receiving maskpatterns at a plasma display, having individually addressable pixels,operably connected to and controllable by said computer system, b.activating the pixels of said plasma display to generate a patternedlight beam corresponding to said mask patterns provided by said computersystem; and c. collimating said patterned light beam generated by saidplasma display; wherein said display generates said patterned light beamcorresponding to said mask patterns provided by said computer system toexpose said substrate to said patterned light beam and to createpatterns on said substrate corresponding to said mask patterns.
 57. Themethod of claim 50, further comprising: a. providing selective filteringof the light beam impinging on the substrate to prevent exposure of thesubstrate during an alignment procedure; b. allowing manual alignment ofsaid substrate under the light beam by moving said substrate in threedimensions, wherein said substrate is moved in coplanar first and seconddimensions, and moved in a third dimension direction substantiallyperpendicular to said first and second coplanar dimensions, andsubstantially parallel to the light beam reflected from said micromirrorarray; c. allowing optical monitoring of positioning of the substrateunder the light beam to visually verify that an image projected on thesubstrate is properly aligned; d. receiving alignment informationcorresponding to alignment of a desired mask pattern projected onto asubstrate; e. generating alignment instructions based on receivedalignment information; f. providing alignment instructions, based onsaid alignment information, to said micromirror array to further alignsaid mask patterns in the coplanar first and second dimensions; g.adjusting said micromirror array according to said alignmentinstructions by shifting the mask pattern in at least one of thecoplanar first and second dimensions; h. disabling filtering of thelight beam; i. exposing the substrate; and j. repeating steps (a-i) tocreate a desired pattern on the substrate.